Improving Thermoelectric Properties of p-type (BiSb)2(TeSe)3 Single Crystal by Zr Doping

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dc.citation.epage70
dc.citation.issue1
dc.citation.rankM23
dc.citation.spage57
dc.citation.volume55
dc.contributor.authorPožega, Emina
dc.contributor.authorVuković, Nikola
dc.contributor.authorGomidželović, Lidija
dc.contributor.authorJanošević, Miloš
dc.contributor.authorJovanović, Milenko
dc.contributor.authorMarjanović, Saša
dc.contributor.authorMitrović, Milijana
dc.date.accessioned2023-12-25T21:46:02Z
dc.date.available2023-12-25T21:46:02Z
dc.date.issued2023
dc.description.abstractIn order to study the effect of Zr doping on the thermoelectric properties of p-type Bi10.17Sb30.72 Zr0.35Te58.28Se0.48 single crystal, аn ingot was prepared by Bridgman method. Cut and cleaved samples from different regions of ingot were characterized by a Hall Effect based on the Van der Pauw method. The first measurements were conducted with four ohmic contacts at room temperature and the obtained results were presented in our investigation, earlier. Аlso, high charge carriers mobility was obtained on the sample with silver contacts at the temperature of liquid nitrogen. Single crystal was characterized by Seebeck coefficient (S), conductivity (κ) and resistivity (ρ) measurements as а function of temperature in the range of 40-320°C by a home-made impedance meter. The prepared single crystal has a figure of merit (Z) of 1.22 x 10-3 K-1 at 300°C.
dc.identifier.doi10.2298/SOS2301057P
dc.identifier.issn0350-820X
dc.identifier.issn1820-7413
dc.identifier.urihttps://repozitorijum.tfbor.bg.ac.rs/handle/123456789/778
dc.language.isoen
dc.publisherAssociation for ETRAN Society
dc.rights.licenseCC-BY
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.sourceScience of Sintering
dc.subjectHall Effect
dc.subjectThermoelectric properties
dc.subjectBridgman method
dc.subjectSingle crystal
dc.titleImproving Thermoelectric Properties of p-type (BiSb)2(TeSe)3 Single Crystal by Zr Doping
dc.typearticle
dc.type.versionpublishedVersion

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