Improving Thermoelectric Properties of p-type (BiSb)2(TeSe)3 Single Crystal by Zr Doping
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Date
2023
Authors
Požega, Emina
Vuković, Nikola
Gomidželović, Lidija
Janošević, Miloš
Jovanović, Milenko
Marjanović, Saša
Mitrović, Milijana
Journal Title
Journal ISSN
Volume Title
Publisher
Association for ETRAN Society
Source
Science of Sintering
Volume
55
Issue
1
Abstract
In order to study the effect of Zr doping on the thermoelectric properties of p-type Bi10.17Sb30.72 Zr0.35Te58.28Se0.48 single crystal, аn ingot was prepared by Bridgman method. Cut and cleaved samples from different regions of ingot were characterized by a Hall Effect based on the Van der Pauw method. The first measurements were conducted with four ohmic contacts at room temperature and the obtained results were presented in our investigation, earlier. Аlso, high charge carriers mobility was obtained on the sample with silver contacts at the temperature of liquid nitrogen. Single crystal was characterized by Seebeck coefficient (S), conductivity (κ) and resistivity (ρ) measurements as а function of temperature in the range of 40-320°C by a home-made impedance meter. The prepared single crystal has a figure of merit (Z) of 1.22 x 10-3 K-1 at 300°C.
Description
Keywords
Hall Effect, Thermoelectric properties, Bridgman method, Single crystal
Citation
DOI
10.2298/SOS2301057P
Scopus
ISSN
0350-820X
1820-7413
1820-7413
ISBN
License
CC-BY