Improving Thermoelectric Properties of p-type (BiSb)2(TeSe)3 Single Crystal by Zr Doping

Požega, Emina; Vuković, Nikola; Gomidželović, Lidija; Janošević, Miloš; Jovanović, Milenko; Marjanović, Saša; Mitrović, Milijana

doi:10.2298/SOS2301057P

Article Metadata only M23

2023

Požega, Emina
Vuković, Nikola
Gomidželović, Lidija
Janošević, Miloš
Jovanović, Milenko
Marjanović, Saša
Mitrović, Milijana

Association for ETRAN Society

Science of Sintering

English

M23 - Paper in an international journal

In order to study the effect of Zr doping on the thermoelectric properties of p-type Bi10.17Sb30.72 Zr0.35Te58.28Se0.48 single crystal, аn ingot was prepared by Bridgman method. Cut and cleaved samples from different regions of ingot were characterized by a Hall Effect based on the Van der Pauw method. The first measurements were conducted with four ohmic contacts at room temperature and the obtained results were presented in our investigation, earlier. Аlso, high charge carriers mobility was obtained on the sample with silver contacts at the temperature of liquid nitrogen. Single crystal was characterized by Seebeck coefficient (S), conductivity (κ) and resistivity (ρ) measurements as а function of temperature in the range of 40-320°C by a home-made impedance meter. The prepared single crystal has a figure of merit (Z) of 1.22 x 10-3 K-1 at 300°C.

Hall Effect, Thermoelectric properties, Bridgman method, Single crystal

DOI

10.2298/SOS2301057P

ISSN

0350-820X
1820-7413

URI

https://repozitorijum.tfbor.bg.ac.rs/handle/...

Scopus

OpenCitations

dc.rights.license	CC-BY
dc.date.accessioned	2023-12-25T21:46:02Z
dc.date.available	2023-12-25T21:46:02Z
dc.date.issued	2023
dc.identifier.issn	0350-820X
dc.identifier.issn	1820-7413
dc.identifier.doi	10.2298/SOS2301057P
dc.identifier.uri	https://repozitorijum.tfbor.bg.ac.rs/handle/123456789/778
dc.description.abstract	In order to study the effect of Zr doping on the thermoelectric properties of p-type Bi10.17Sb30.72 Zr0.35Te58.28Se0.48 single crystal, аn ingot was prepared by Bridgman method. Cut and cleaved samples from different regions of ingot were characterized by a Hall Effect based on the Van der Pauw method. The first measurements were conducted with four ohmic contacts at room temperature and the obtained results were presented in our investigation, earlier. Аlso, high charge carriers mobility was obtained on the sample with silver contacts at the temperature of liquid nitrogen. Single crystal was characterized by Seebeck coefficient (S), conductivity (κ) and resistivity (ρ) measurements as а function of temperature in the range of 40-320°C by a home-made impedance meter. The prepared single crystal has a figure of merit (Z) of 1.22 x 10-3 K-1 at 300°C.
dc.language.iso	en
dc.publisher	Association for ETRAN Society
dc.rights.uri	https://creativecommons.org/licenses/by/4.0/
dc.source	Science of Sintering
dc.subject	Hall Effect
dc.subject	Thermoelectric properties
dc.subject	Bridgman method
dc.subject	Single crystal
dc.title	Improving Thermoelectric Properties of p-type (BiSb)2(TeSe)3 Single Crystal by Zr Doping
dc.type	article
dc.type.version	publishedVersion
dc.citation.volume	55
dc.citation.issue	1
dc.creator	Požega, Emina
dc.citation.spage	57
dc.citation.epage	70
dc.citation.rank	M23
dc.creator	Vuković, Nikola
dc.creator	Gomidželović, Lidija
dc.creator	Janošević, Miloš
dc.creator	Jovanović, Milenko
dc.creator	Marjanović, Saša
dc.creator	Mitrović, Milijana


Improving Thermoelectric Properties of p-type (BiSb)2(TeSe)3 Single Crystal by Zr Doping	1